Samsung MZ-76E3T8E Samsung 860 DCT 3.84 TB 2.5" Serial ATA III MLC

Availability :
Limited Availability
Mfr. Part# :
MZ-76E3T8E
$2,266.95
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PRODUCT DETAILS:

V-NAND TechnologySamsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 48 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.Optimized Performance & ValueBuilt to handle the heavier workloads of data center usage, the 860DCT delivers a high level of sustained performance at a great value for your business.Outstanding ReliabilityThe 860DCT 3.8TB is optimized for server and data center environments by offering reinforced endurance, low power consumption and a 3-year limited warranty up to 1,396 TBW.Data Protection for Peace of MindSecure data without performance degradation thanks to AES 256-bit encryption.Efficient Power ManagementThanks to low power consumption, you can enhance efficiency for operations and maintenance.S.M.A.R.T.Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).Samsung ComponentsSamsung's solid state drives are built entirely from Samsung components, leveraging our extensive OEM expertise to allow complete, optimized integration.

Hard drive
SSD capacity3.84 TB
Memory typeMLC
Data transmission
Random write (4KB)19000 IOPS
Random read (4KB)98000 IOPS
Data transfer rate6 Gbit/s
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Features
InterfaceSerial ATA III
Component forServer/workstation
Controller typeSamsung MJX
NVMeNo
Sequential write speed (AS SSD)520 MB/s
Sequential read speed (AS SSD)550 MB/s
NAND flash typeMLC (Multi Level Cell)
Active garbage collectionYes
TBW rating1396
SSD capacity3.84 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
TRIM supportYes
Memory typeMLC
Random write (4KB)19000 IOPS
Random read (4KB)98000 IOPS
Mean time between failures (MTBF)1500000 h
Data transfer rate6 Gbit/s
SSD form factor2.5"
Harmonized System (HS) code84717070
Power
Power consumption (write)2.95 W
Power consumption (read)2.02 W
Power consumption (idle)1.05 W
Performance
InterfaceSerial ATA III
Component forServer/workstation
Controller typeSamsung MJX
NVMeNo
Sequential write speed (AS SSD)520 MB/s
Sequential read speed (AS SSD)550 MB/s
NAND flash typeMLC (Multi Level Cell)
Active garbage collectionYes
TBW rating1396
SSD capacity3.84 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
TRIM supportYes
Memory typeMLC
Random write (4KB)19000 IOPS
Random read (4KB)98000 IOPS
Mean time between failures (MTBF)1500000 h
Data transfer rate6 Gbit/s
Design
Component forServer/workstation
Product colourBlack
SSD form factor2.5"
Weight & dimensions
Width3.94" (100.1 mm)
Weight2.12 oz (60 g)
Height0.272" (6.9 mm)
Depth2.75" (69.9 mm)
Operational conditions
Operating temperature (T-T)0 - 70 °C
Storage temperature (T-T)-40 - 85 °C
Operating relative humidity (H-H)5 - 95%
Storage relative humidity (H-H)5 - 95%
Operating shock1500 G
Non-operating shock1500 G
Non-operating vibration20 G
Technical details
InterfaceSerial ATA III
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Storage temperature (T-T)-40 - 85 °C
Operating relative humidity (H-H)5 - 95%
Storage relative humidity (H-H)5 - 95%
Operating shock1500 G
Non-operating shock1500 G
Non-operating vibration20 G
Product colourBlack
SSD form factor2.5"
Other features
Product colourBlack
Logistics data
Harmonized System (HS) code84717070

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Samsung MZ-76E3T8E Samsung 860 DCT 3.84 TB 2.5" Serial ATA III MLC

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