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Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

Registered DIMMIncludes a register for enhancing clock, command and control signals Error correction available by added 8 bit parity signals Supports x4 / x8 Organization / up to 2 ranks per DIMM and 3DPC configuration Application : Server

The memory ready to meet massively growing workloads.Every single day your servers need to process even more data, threatening your business with slow performance and higher operational costs.Samsung DRAM is designed to deliver dashing speed and to boast high capacity allowing more workloads to be completed while optimizing the total cost of ownership.

Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios. Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.

Registered DIMM Includes a register for enhancing clock, command and control signals Error correction available by added 8 bit parity signals Supports x4 / x8 Organization / up to 2 ranks per DIMM and 3DPC configuration Application : Server

Boost your PC’s performance to new levels.You need the right expert for the right PC memory solution.Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.Improved bandwidth for high-end applications.With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.Complete multi-tasking with less energy.Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.Double your capacity with the world’s 1st 8Gb chips.The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.

Boost your PC’s performance to new levels.You need the right expert for the right PC memory solution.Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.Improved bandwidth for high-end applications.With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.Complete multi-tasking with less energy.Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.Double your capacity with the world’s 1st 8Gb chips.The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.

Proven DRAM module solution in the global marketSamsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.